bby 52 oct-05-1999 1 silicon tuning diode ? high q hyperabrupt dual tuning diode ? designed for low tuning voltage operation ? for vco's in mobile communications equipment 1 2 3 vps05161 type marking pin configuration package bby 52 s5s 1 = a1 2 = a2 3 = c1/2 sot-23 maximum ratings parameter symbol value unit diode reverse voltage v r 7 v forward current i f 20 ma operating temperature range t op -55 ... 150 c storage temperature t st g -55 ... 150
bby 52 oct-05-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 6 v i r - - 10 na reverse current v r = 6 v, t a = 150 c i r - - 100 ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 2 v, f = 1 mhz v r = 3 v, f = 1 mhz v r = 4 v, f = 1 mhz c t 1.4 - - 0.85 pf 1.85 1.5 1.35 1.15 2.2 - - 1.45 - 1.1 c t1 / c t4 2.1 1.6 capacitance ratio v r = 1 v, v r = 4 v, f = 1 mhz series resistance v r = 1 v, f = 1 ghz ? r s - 0.9 1.8 case capacitance f = 1 mhz c c - 0.12 - pf series inductance l s - 2 - nh
bby 52 oct-05-1999 3 diode capacitance c t = f ( v r ) f = 1mhz 1.0 1.5 2.0 2.5 3.0 v 4.0 v r 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 pf 2.6 c d reverse current i r = f ( v r ) t a = 25 c 0.0 1.0 2.0 3.0 4.0 5.0 v 7.0 v r 0 5 10 15 20 25 30 35 pa 45 i r
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